| PART |
Description |
Maker |
| HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
HSMS-2802 · Low reverse leakage Schottky diode
HSMS-2803 · Low reverse leakage Schottky diode
HSMS-2804 · Low reverse leakage Schottky diode
HSMS-2805 · Low reverse leakage Schottky diode
HSMS-2808 · Low reverse leakage Schottky diode
HSMS-280B · Low reverse leakage Schottky diode
HSMS-280C · Low reverse leakage Schottky diode
HSMS-280E · Low reverse leakage Schottky diode
HSMS-280F · Low reverse leakage Schottky diode
HSMS-280K · Low reverse leakage Schottky diode
HSMS-280L · Low reverse leakage Schottky diode
HSMS-280M · Low reverse leakage Schottky diode
HSMS-280N · Low reverse leakage Schottky diode
HSMS-280R · Low reverse leakage Schottky diode
|
http://
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| L-53CGCK |
The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode
|
Kingbright Electronic
KINGBRIGHT[Kingbright Corporation]
|
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| MBRS15H45CT |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBRH200100 MBRH200100R MBRH20045 MBRH20045R MBRH20 |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
| MBRH12060R MBRH12045R |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
| 1N6095R 1N6096R |
High Power Schottky Rectifiers - DO4 Stud Devices
|
America Semiconductor
|
| MBR3560R |
High Power Schottky Rectifiers - DO4 Stud Devices
|
America Semiconductor
|
| MMSD301T1 ON2245 MMSD701T1 |
From old datasheet system
Motorola Preferred Devices
SOD-123 Schottky Barrier Diodes
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
